SAVANTIC 2SC3710

SavantIC Semiconductor
Product Specification
2SC3710
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SA1452
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
12
A
IB
Base current
2
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC3710
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A;IB=0.3A
0.2
0.4
V
VBEsat
Base-emitter saturation voltage
IC=6A;IB=0.3A
0.9
1.2
V
ICBO
Collector cut-off current
VCB=80V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
µA
hFE-1
DC current gain
IC=1A ; VCE=1V
70
hFE-2
DC current gain
IC=6A ; VCE=1V
40
COB
Output capacitance
IE=0 ; VCB=10V, f=1MHz
220
pF
fT
Transition frequency
IC=1A ; VCE=5V
80
MHz
0.2
µs
1.0
µs
0.2
µs
80
UNIT
V
240
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=0.3A
VCCB30V ,RL=5C
hFE-1 Classifications
O
Y
70-140
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC3710
SavantIC Semiconductor
Product Specification
2SC3710
Silicon NPN Power Transistors
4