SavantIC Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A PC Collector power dissipation Ta=25 2 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.3 -0.5 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -1.4 V ICBO Collector cut-off current VCB=-100V; IE=0 -5 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 µA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-4A ; VCE=-1V 30 fT Transition frequency IC=-1A ; VCE=-4V 10 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF 0.4 µs 2.5 µs 0.5 µs -80 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time RL=10@ IB1=-IB2=-0.3A VCC=-30V hFE-1 Classifications O Y 70-140 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1018