SAVANTIC 2SB1481

SavantIC Semiconductor
Product Specification
2SB1481
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2241
·High DC current gain.
·Low saturation voltage.
·DARLINGTON
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
±4
A
ICM
Collector current-peak
±6
A
PC
Collector dissipation
TC=25
25
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1481
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A ; IB=-6mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-3A ; IB=-6mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V;IE=0
-2
µA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-2.5
mA
hFE-1
DC current gain
IC=-1.5A ; VCE=-2V
2000
hFE-2
DC current gain
IC=-3A ; VCE=-2V
1000
VECO
Diode forward voltage
IC=1A ; IB=0
2.0
V
ton
Turn-on time
tstg
Storage time
tf
CONDITIONS
IB1=-IB2=-6mA
VCC@-30V; RL=10A
Fall time
2
MIN
TYP.
MAX
-100
UNIT
V
0.15
µs
0.80
µs
0.40
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1481