SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current ±4 A ICM Collector current-peak ±6 A PC Collector dissipation TC=25 25 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-3A ; IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ; IB=-6mA -2.0 V ICBO Collector cut-off current VCB=-100V;IE=0 -2 µA IEBO Emitter cut-off current VEB=-5V;IC=0 -2.5 mA hFE-1 DC current gain IC=-1.5A ; VCE=-2V 2000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 VECO Diode forward voltage IC=1A ; IB=0 2.0 V ton Turn-on time tstg Storage time tf CONDITIONS IB1=-IB2=-6mA VCC@-30V; RL=10A Fall time 2 MIN TYP. MAX -100 UNIT V 0.15 µs 0.80 µs 0.40 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1481