SAVANTIC 2SB1101

SavantIC Semiconductor
Product Specification
2SB1101
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1601
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB1101
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ,IB=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50mA ,IC=0
-7
V
VCEsat -1
Collector-emitter saturation voltage
IC=-2A; IB=-4mA
-1.5
V
VCEsat -2
Collector-emitter saturation voltage
IC=-4A; IB=-40mA
-3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=-2A; IB=-4mA
-2.0
V
VBEsat-2
Base-emitter saturation voltage
IC=-4A; IB=-40mA
-3.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-100
µA
ICEO
Collecto cut-off current
VCE=-50V; RBE=B
-10
µA
hFE
DC current gain
IC=-2A ; VCE=-3V
VD
Diode forward voltage
ID=4A;
1000
MAX
UNIT
20000
3.0
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-2A IB1=-IB2=-4mA
2
0.8
µs
4.0
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SB1101