SavantIC Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Complement to type 2SD2469 APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A ICM Collector current-peak -15 A PC Collector dissipation TC=25 40 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A ; IB=-0.25A -1.5 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V;IC=0 -50 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 90 Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.5 µs 1.5 µs 0.1 µs Switching times ton Turn-on time tstg Storage time tf IC=-3A; IB1=-IB2=-0.3A Fall time hFE-2 classifications Q P 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1607 SavantIC Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors 4