SAVANTIC 2SD985

SavantIC Semiconductor
Product Specification
2SD985 2SD986
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SB794/795
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SD985
Emitter -base voltage
UNIT
150
V
60
Open base
2SD986
VEBO
VALUE
V
80
Open collector
8
V
IC
Collector current
±1.5
A
ICM
Collector current-Peak
±3.0
A
IB
Base current
0.15
A
PT
Total power dissipation
Ta=25
1.0
W
TC=25
10
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD985 2SD986
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter saturation voltage
VBEsat
Base-emitter saturation voltage
2SD985
ICBO
MIN
TYP.
MAX
UNIT
IC=1.0A; IB=1.0mA
1.5
V
IC=1.0A; IB=1.0mA
2.0
V
10
µA
2.0
mA
VCB=60V; IE=0
Collector cut-off current
2SD986
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
1000
hFE-2
DC current gain
IC=1.0A ; VCE=2V
2000
30000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.0A;IB1=-IB2=1.0mA
VCC=50V; RL=50B
hFE-2 Classifications
M
L
K
2000-5000
4000-10000
8000-30000
2
0.5
µs
1.0
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD985 2SD986