SAVANTIC 2SB754

SavantIC Semiconductor
Product Specification
2SB754
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SD844
·High collector current :IC=-7A
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
IE
Emitter current
7
A
PC
Collector power dissipation
Ta=25
2.5
TC=25
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB754
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-50
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10mA; IC=0
-5
V
Collector-emitter saturation voltage
IC=-4.0A; IB=-0.4A
-0.2
-0.4
V
VBE
Base-emitter voltage
IC=-4A ; VCE=-1V
-0.9
-1.2
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE-1
DC current gain
IC=-1A ; VCE=-1V
70
hFE-2
DC current gain
IC=-4A ; VCE=-1V
30
Transition frequency
IC=-1A ; VCE=-5V
10
MHz
Collector output capacitance
IE=0;f=1MHz ; VCB=-10V
300
pF
VCEsat
fT
COB
CONDITIONS
hFE-1 Classifications
O
Y
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
2SB754
SavantIC Semiconductor
Product Specification
2SB754
Silicon Power Transistors
4