SAVANTIC 2SB677

SavantIC Semiconductor
Product Specification
2SB677
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·High power switching applications
·Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
-3
A
-0.2
A
25
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB677
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA, IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ,IB=-4mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A ,IB=-4mA
-2.0
V
ICBO
Collector cut-off current
VCB=-60V, IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
2000
hFE-2
DC current gain
IC=-3A ; VCE=-2V
1000
2
MIN
TYP.
MAX
-40
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB677