SavantIC Semiconductor Product Specification 2SB677 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V -3 A -0.2 A 25 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB677 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA, IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-4mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-4mA -2.0 V ICBO Collector cut-off current VCB=-60V, IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 2000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 2 MIN TYP. MAX -40 UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB677