Inchange Semiconductor Product Specification 2SB668 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO D N O IC PARAMETER Collector-base voltage VALUE UNIT Open emitter -100 V Open base -100 V -5 V M E S GE N A H INC Collector-emitter voltage Emitter-base voltage R O T UC CONDITIONS Open collector IC Collector current -3 A ICM Collector current-peak -5 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB668 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-8mA -2.0 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-8mA -2.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 μA ICEO Collector cut-off current VCE=-100V, IB=0 -500 μA -2 mA IEBO hFE 导体 半 电 CONDITIONS 固 Emitter cut-off current M E S E IC=-1A ; VCE=-3V IN G N A CH 2 TYP. MAX R O T UC D N O IC VEB=-5V, IC=0 DC current gain MIN 2000 UNIT Inchange Semiconductor Product Specification 2SB668 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC M E S GE N A H INC R O T UC Fig.2 Outline dimensions 3