Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC PARAMETER Collector-base voltage Emitter-base voltage CONDITIONS IC M E ES G N A INCH Collector-emitter voltage OND Open emitter Open base Open collector Collector current-DC R O T UC VALUE UNIT -100 V -100 V -5 V -5 A Ta=25℃ 1.5 TC=25℃ 30 Collector power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -3 mA hFE-1 DC current gain IC=-2A , VCE=-5V 2000 hFE-2 DC current gain IC=-5A , VCE=-5V 500 导体 半 电 固 MIN TYP. -100 N A H INC 2 UNIT V 20000 R O T UC D N O IC M E S GE MAX Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3