ISC 2SB1087

Inchange Semiconductor
Product Specification
2SB1087
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・High DC current gain
・DARLINGTON
APPLICATIONS
・For low frequency power amplifier and low
speed power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体
半
电
固
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PC
PARAMETER
Collector-base voltage
Emitter-base voltage
CONDITIONS
IC
M
E
ES
G
N
A
INCH
Collector-emitter voltage
OND
Open emitter
Open base
Open collector
Collector current-DC
R
O
T
UC
VALUE
UNIT
-100
V
-100
V
-5
V
-5
A
Ta=25℃
1.5
TC=25℃
30
Collector power dissipation
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1087
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA, IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ,IB=-2mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A ,IB=-2mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V, IE=0
1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3
mA
hFE-1
DC current gain
IC=-2A , VCE=-5V
2000
hFE-2
DC current gain
IC=-5A , VCE=-5V
500
导体
半
电
固
MIN
TYP.
-100
N
A
H
INC
2
UNIT
V
20000
R
O
T
UC
D
N
O
IC
M
E
S
GE
MAX
Inchange Semiconductor
Product Specification
2SB1087
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3