SAVANTIC 2SB1478

SavantIC Semiconductor
Product Specification
2SB1478
Silicon PNP Power Transistors
DESCRIPTION
·With TO-247 package
·Complement to type 2SD2237
·High DC current gain
·DARLINGTON
APPLICATIONS
·For use in power linear and switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
-8
A
60
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB1478
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-0.1mA; IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-2mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A;IB=-20m A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A;IB=-20m A
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2
mA
hFE
DC current gain
IC=-2A ; VCE=-3V
2
MIN
2000
TYP.
MAX
20000
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1478