SavantIC Semiconductor Product Specification 2SB1478 Silicon PNP Power Transistors DESCRIPTION ·With TO-247 package ·Complement to type 2SD2237 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V -8 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1478 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A;IB=-20m A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A;IB=-20m A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -2 mA hFE DC current gain IC=-2A ; VCE=-3V 2 MIN 2000 TYP. MAX 20000 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1478