SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SB954 VCBO Collector-base voltage -60 Open base 2SB954A VEBO V -80 2SB954 Collector-emitter voltage Emitter-base voltage UNIT -60 Open emitter 2SB954A VCEO VALUE V -80 Open collector -5 V IC Collector current -1 A ICM Collector current-peak -2 A PC Collector power dissipation Ta=25 2 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 1 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter voltage CONDITIONS 2SB954 MIN TYP. MAX UNIT -60 IC=-30mA ;IB=0 V -80 2SB954A Collector-emitter saturation voltage IC=-1.0A ;IB=-0.125A -1.0 V VBE Base-emitter voltage IC=-1A ; VCE=-4V -1.3 V ICEO Collector cut-off current -300 µA -200 µA -1 mA ICES Collector cut-off current 2SB954 VCE=-30V; IB=0 2SB954A VCE=-60V; IB=0 2SB954 VCE=-60V; VBE=0 2SB954A VCE=-80V; VBE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.2A ; VCE=-4V 70 hFE-2 DC current gain IC=-1A ; VCE=-4V 15 fT Transition frequency IC=-0.2A; VCE=-5V,f=10MHz ton Trun-on time ts Storage time tf Fall time IC=-1A ;VCC=-50V IB1=-0.1A, IB2=0.1A hFE-1 Classifications Q P 70-150 120-250 2 250 30 MHz 0.5 µs 1.2 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A 4