SAVANTIC 2SB954

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB954 2SB954A
DESCRIPTION
·With TO-220Fa package
·High forward current transfer ratio hFE
which has satisfactory linearity
·Low collector saturation voltage
APPLICATIONS
·For power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SB954
VCBO
Collector-base voltage
-60
Open base
2SB954A
VEBO
V
-80
2SB954
Collector-emitter voltage
Emitter-base voltage
UNIT
-60
Open emitter
2SB954A
VCEO
VALUE
V
-80
Open collector
-5
V
IC
Collector current
-1
A
ICM
Collector current-peak
-2
A
PC
Collector power dissipation
Ta=25
2
TC=25
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
1
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB954 2SB954A
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO
VCEsat
PARAMETER
Collector-emitter
voltage
CONDITIONS
2SB954
MIN
TYP.
MAX
UNIT
-60
IC=-30mA ;IB=0
V
-80
2SB954A
Collector-emitter saturation voltage
IC=-1.0A ;IB=-0.125A
-1.0
V
VBE
Base-emitter voltage
IC=-1A ; VCE=-4V
-1.3
V
ICEO
Collector
cut-off current
-300
µA
-200
µA
-1
mA
ICES
Collector
cut-off current
2SB954
VCE=-30V; IB=0
2SB954A
VCE=-60V; IB=0
2SB954
VCE=-60V; VBE=0
2SB954A
VCE=-80V; VBE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.2A ; VCE=-4V
70
hFE-2
DC current gain
IC=-1A ; VCE=-4V
15
fT
Transition frequency
IC=-0.2A; VCE=-5V,f=10MHz
ton
Trun-on time
ts
Storage time
tf
Fall time
IC=-1A ;VCC=-50V
IB1=-0.1A, IB2=0.1A
hFE-1 Classifications
Q
P
70-150
120-250
2
250
30
MHz
0.5
µs
1.2
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB954 2SB954A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB954 2SB954A
4