SAVANTIC 2SB941

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB941 2SB941A
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·Complementary to type 2SD1266/1266A
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SB941
VCBO
Collector-base voltage
-60
Open base
2SB941A
VEBO
Emitter-base voltage
V
-80
2SB941
Collector-emitter voltage
UNIT
-60
Open emitter
2SB941A
VCEO
VALUE
V
-80
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector power dissipation
Ta=25
2
TC=25
35
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB941 2SB941A
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO
VCEsat
PARAMETER
Collector-emitter
voltage
CONDITIONS
2SB941
MIN
TYP.
MAX
UNIT
-60
IC=-30mA ,IB=0
V
-80
2SB941A
Collector-emitter saturation voltage
IC=-3A, IB=-0.375A
-1.2
V
VBE
Base-emitter voltage
IC=-3A ; VCE=-4V
-1.8
V
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
ICEO
Collector
cut-off current
-0.3
mA
-0.2
mA
ICES
Collector
cut-off current
2SB941
VCE=-30V; IB=0
2SB941A
VCE=-60V; IB=0
2SB941
VCE=-60V; VBE=0
2SB941A
VCE=-80V; VBE=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
70
hFE-2
DC current gain
IC=-3A ; VCE=-4V
10
Transition frequency
IC=0.5A; VCE=-10V,f=10MHz
fT
250
30
MHz
0.5
µs
1.2
µs
0.3
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-1A
IB1=-0.1A ,IB2=0.1A
Fall time
hFE-1 Classifications
Q
P
70-150
120-250
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB941 2SB941A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB941,2SB941A
4