SAVANTIC 2SB1393A

SavantIC Semiconductor
Product Specification
2SB1393 2SB1393A
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220Fa package
·Satisfactory linearity of hFE
·Low collector to emitter saturation voltage
·Complement to type 2SD1985/1985A
APPLICATIONS
·For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SB1393
VCBO
Collector-base voltage
-60
Open base
2SB1393A
VEBO
Emitter-base voltage
IC
V
-80
2SB1393
Collector-emitter voltage
UNIT
-60
Open emitter
2SB1393A
VCEO
VALUE
V
-80
Open collector
-5
V
Collector current (DC)
-3
A
ICM
Collector current-Peak
-5
A
PC
Collector power dissipation
TC=25
25
W
Ta=25
2
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1393 2SB1393A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SB1393
MIN
TYP.
MAX
UNIT
-60
V
IC=-30mA , IB=0
-80
2SB1393A
Collector-emitter saturation voltage
IC=-3A; IB=-0.375A
-1.2
V
VBE
Base-emitter voltage
VCE=-4V; IC=-3A
-1.8
V
ICES
Collector
cut-off current
-200
µA
-300
µA
-1.0
mA
ICEO
Collector
cut-off current
2SB1393
VCE=-60V ;VBE=0
2SB1393A
VCE=-80V; VBE=0
2SB1393
VCE=-30V; IB=0
2SB1393A
VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
70
hFE-2
DC current gain
IC=-3A ; VCE=-4V
10
Transition frequency
IC=-0.1A; VCE=-5V;f=1MHz
fT
250
20
MHz
0.5
µs
1.2
µs
0.3
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-1A ;IB1=-0.1A
IB2=0.1A;VCC=-50V
hFE-1 Classifications
Q
P
70-150
120-250
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1393 2SB1393A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
2SB1393 2SB1393A
Silicon PNP Power Transistors
4