JMnic Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SB942 VCBO Collector-base voltage -60 Open base 2SB942A VEBO Emitter-base voltage V -80 2SB942 Collector-emitter voltage UNIT -60 Open emitter 2SB942A VCEO VALUE V -80 Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB942 2SB942A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter voltage CONDITIONS 2SB942 MIN TYP. MAX UNIT -60 IC=-30mA ,IB=0 V -80 2SB942A Collector-emitter saturation voltage IC=-4A, IB=-0.4A -1.5 V VBE Base-emitter voltage IC=-3A ; VCE=-4V -2 V IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA ICEO Collector cut-off current -0.7 mA -0.4 mA ICES Collector cut-off current 2SB942 VCE=-30V; IB=0 2SB942A VCE=-60V; IB=0 2SB942 VCE=-60V; VBE=0 2SB942A VCE=-80V; VBE=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 70 hFE-2 DC current gain IC=-3A ; VCE=-4V 15 Transition frequency IC=-0.1A; VCE=-10V,f=10MHz fT 250 30 MHz 0.2 μs 0.5 μs 0.2 μs Switching times ton Turn-on time tstg Storage time tf IC=-4A IB1=-0.4A ,IB2=0.4A Fall time hFE-1 Classifications Q P 70-150 120-250 2 JMnic Product Specification 2SB942 2SB942A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 JMnic Product Specification 2SB942 2SB942A Silicon PNP Power Transistors 4