SAVANTIC 2SA1120

SavantIC Semiconductor
Product Specification
2SA1120
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·High transition frequency
·Low collector saturation voltage
APPLICATIONS
·Audio power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-35
V
VCEO
Collector-emitter voltage
Open base
-35
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-5
A
IB
Base current
-1
A
PD
Ta=25
1.5
TC=25
5
W
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55 +150
SavantIC Semiconductor
Product Specification
2SA1120
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-0.1A
-1.0
V
VBE
Base-emitter on voltage
IC=-4A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-35V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-500mA ; VCE=-2V
200
hFE-2
DC current gain
IC=-4A ; VCE=-2V
70
Cob
Output capacitance
IE=0 ; VCB=-10V f=1MHz
62
pF
fT
Transition frequency
IC=-500mA ; VCE=-2V
170
MHz
2
MIN
TYP.
MAX
-35
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA1120