SavantIC Semiconductor Product Specification BUX11 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V 20 A 25 A 4 A 150 W IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature 200 Tstg Storage temperature -65~200 tp=10ms TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification BUX11 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2mA; IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=6 A;IB=0.6A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=12 A;IB=1.5 A 1.5 V Base-emitter saturation voltage IC=12 A;IB=1.5 A 1.5 V ICEX Collector cut-off current VCE=250V;VBE=-1.5V TC=125 1.5 6.0 mA ICEO Collector cut-off current VCE=160V;IB=0 1.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=6A ; VCE=2V 20 hFE-2 DC current gain IC=12A ; VCE=4V 10 Transition frequency IC=1A ; VCE=15V; f=10MHz 8.0 VBEsat fT CONDITIONS MIN TYP. MAX UNIT 60 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=12A ;IB1=1.5A VCC=150V IC=12A ;IB1=-IB2=1.5A VCC=150V 2 1.0 µs 1.8 µs 0.4 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX11