SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC3298 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SC3298A Open emitter Emitter-base voltage 180 2SC3298B 200 2SC3298 160 2SC3298A UNIT 160 Open base 2SC3298B VEBO VALUE 180 V V 200 Open collector 5 V IC Collector current 1.5 A IB Base current 0.15 A PC Collector power dissipation 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC3298 V(BR)CEO Collector-emitter breakdown voltage 2SC3298A TYP. MAX UNIT 160 IC=10mA , IB=0 2SC3298B VCEsat MIN V 180 200 Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.5 V VBE Base-emitter voltage IC=0.5A ,VCE=5V 1.0 V ICBO Collector cut-off current VCB=160V, IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE DC current gain IC=0.1A ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 25 pF fT Transition frequency IC=0.1A ; VCE=10V 100 MHz hFE Classifications O Y 70-140 120-240 2 70 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3298 2SC3298A 2SC3298B PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3