SavantIC Semiconductor Product Specification 2SC2209 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA963 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-peak 3 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2209 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=2mA;IB=0 40 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 50 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=150mA 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 1 µA ICEO Collector cut-off current VCE=10V; IB=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0 ; VCB=5V;f=1MHz 50 pF fT Transition frequency IC=0.5A ; VCB=5V,f=200MHz 150 MHz hFE Classifications Q R 80-160 120-220 2 MIN TYP. 80 MAX UNIT 220 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2209 SavantIC Semiconductor Product Specification 2SC2209 Silicon NPN Power Transistors 4