SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector- emitter voltage CONDITIONS Open emitter 2SA1096 UNIT -70 V -50 Open base 2SA1096A VEBO VALUE Emitter-base voltage V -60 Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A 1 1.2* PD Total power dissipation TC=25 W 2 5* Tj Junction temperature 150 Tstg Storage temperature -55 +150 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SA1096 MIN TYP. MAX UNIT -50 V IC=-2mA ; IB=0 -60 2SA1096A V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.0 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.5 V ICEO Collector cut-off current VCE=-10V; IB=0 -1 µA ICBO Collector cut-off current VCB=-20V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE DC current gain IC=-1A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-20V,f=1MHz 55 pF fT Transition frequency IE=-0.5A ; VCB=-5V,f=200MHz 150 MHz hFE Classifications Q R 80-160 120-220 2 -70 V 80 220 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SA1096 2SA1096A SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors 4 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 5 2SA1096 2SA1096A