SavantIC Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SA1077 ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V 10 A 60 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; RBE=: 120 V V(BR)CBO Collector-base breakdown voltage IC=50µA ; IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50µA ; IC=0 7 V Collector-emitter saturation voltage IC=5A; IB=0.5A 1.8 V VBE Base-emitter on voltage IC=5 A ; VCE=5V 1.7 V ICBO Collector cut-off current VCB=120V ;IE=0 50 µA ICEO Collector cut-off current VCE=120V; IB=0 1 mA IEBO Emitter cut-off current VEB=7V ;IC=0 50 µA hFE-1 DC current gain IC=1 A ; VCE=5V 60 hFE -2 DC current gain IC=5 A ; VCE=5V 40 fT Transition frequency IC=1 A ; VCE=10V 80 MHz COB Output capacitance IE=0 ; VCB=10V; f=1MHz 180 pF 0.3 µs 1.3 µs 0.2 µs VCEsat CONDITIONS MIN TYP. MAX UNIT 200 Switching times tr Rise time ts Storage time tf Fall time IC=7.5 A; RL=4B IB1=-IB2=0.75A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2527