Inchange Semiconductor Product Specification 2SC2525 Silicon NPN Power Transistors · DESCRIPTION ·With MT-200 package ·Complement to type 2SA1075 ·Excellent safe operating area ·Ultra fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V 12 A 120 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2525 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞ 120 V V(BR)CBO Collector-base breakdown voltage IC=50μA; IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50μA; IC=0 7 V Collector-emitter saturation voltage IC=5 A;IB=0.5 A 0.7 1.8 V VBE Base-emitter voltage IC=5A ; VCE=5V 1.25 1.7 V ICBO Collector cut-off current VCB=120V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=1A ; VCE=5V 60 hFE-2 DC current gain IC=7A ; VCE=5V 40 fT Transition frequency IC=1A ; VCB=10V,f=1MHz 50 COB Output capacitance IE=0; VCB=10V;f=1MHz VCEsat CONDITIONS MIN TYP. MAX UNIT 200 80 180 MHz 300 pF Switching times tr Rise time ts Storage time tf Fall time IC=7.5A; RL=4Ω IB1=-IB2=0.75A 2 0.3 μs 1.3 μs 0.2 μs Inchange Semiconductor Product Specification 2SC2525 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3