Inchange Semiconductor Product Specification 2SA1075 2SA1076 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SC2525,2SC2526 ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA1075 VCBO Collector-base voltage 2SA1075 Collector-emitter voltage Emitter-base voltage -120 V -160 V -120 V -160 V -7 V -12 A 120 W Open base 2SA1076 VEBO UNIT Open emitter 2SA1076 VCEO VALUE Open collector IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1075 2SA1076 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage CONDITIONS 2SA1075 MIN TYP. MAX UNIT -120 IC=-1mA ;RBE=∞ 2SA1076 V -160 2SA1075 -120 IC=-50μA; IE=0 V -160 2SA1076 Emitter-base breakdown voltage IE=-50μA; IC=0 Collector-emitter saturation voltage IC=-5A;IB=-0.5A -1.8 V VBE Base-emitter voltage IC=-5A;VCE=-5V -1.7 V ICBO Collector cut-off current -50 μA -1 mA -50 μA V(BR)EBO VCEsat ICEO 2SA1075 VCB=-120V; IE=0 2SA1076 VCB=-160V; IE=0 2SA1075 VCE=-120V; IB=0 -7 V Collector cut-off current 2SA1076 VCE=-160V; IB=0 IEBO Emitter cut-off current VEB=-7V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V 60 hFE-2 DC current gain IC=-7A ; VCE=-5V 40 Cob Output capacitance IE=0 ; VCB=-10V 300 pF fT Transition frequency IC=-1A ; VCE=-10V 60 MHz 0.15 μs 0.50 μs 0.11 μs 200 Switching times tr Rise time ts Storage time tf Fall time IC=-7.5A;RL=4Ω IB1=-IB2=-0.75A 2 Inchange Semiconductor Product Specification 2SA1075 2SA1076 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3