SAVANTIC 2SC4108

SavantIC Semiconductor
Product Specification
2SC4108
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High reliability
·High breakdown voltage
·Fast switching speed
·Wide ASO(Safe Operating Area)
APPLICATIONS
·400V/12A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
12
A
ICP
Collector current-pulse
25
A
IB
Base current
4
A
PC
Collector power dissipation
Ta=
2.5
TC=25
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC4108
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=:
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=8A; IB=1.6A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=1.6A
1.5
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=1.6A ; VCE=5V
15
hFE-2
DC current gain
IC=8A ; VCE=5V
10
hFE-3
DC current gain
IC=10mA ; VCE=5V
10
Transition frequency
IC=1.6A ; VCE=10V
20
MHz
Collector output capacitance
f=1MHz ; VCB=10V
160
pF
fT
COB
CONDITIONS
MIN
TYP.
MAX
UNIT
50
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=10A;IB1=2A;
IB2=-4A;RL=20C
VCC=200V
Fall time
hFE-1 classifications
L
M
N
15-30
20-40
30-50
2
0.5
µs
2.5
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC4108
SavantIC Semiconductor
Product Specification
2SC4108
Silicon NPN Power Transistors
4