SavantIC Semiconductor Product Specification 2SC3026 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICP Collector current-peak 6 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SC3026 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=9 V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1.25A 2.0 V VBE(sat) Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V Collector cut-off current VCE=1700V; RBE=9 0.5 mA ICES CONDITIONS MIN TYP. MAX UNIT 800 V 6 V Switching times ts Storage time tf Fall time 4.0 µs IC=5A; IB1=1A;IB2=-2.5A 0.5 2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC3026