Product Specification www.jmnic.com 2SC3058 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 30 A 200 W IC Collector current PT Total power dissipation Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base Product Specification www.jmnic.com 2SC3058 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=20A; IB=4A 1.0 V VBEsat Base-emitter saturation voltage IC=20A; IB=4A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE-2 DC current gain IC=20A ; VCE=5V 10 40 Transition frequency IC=4A ; VCE=10V 30 MHz Collector output capacitance IE=0 ; VCB=10V;f=1MHz 420 pF fT COB CONDITIONS JMnic MIN TYP. MAX UNIT Product Specification www.jmnic.com 2SC3058 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic