SAVANTIC 2SC3423

SavantIC Semiconductor
Product Specification
2SC3423
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1360
·High transition frequency
APPLICATIONS
·Audio frequency amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
50
mA
IB
Base current
5
mA
PD
Total power dissipation
Ta=25
1.2
TC=25
5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55 +150
SavantIC Semiconductor
Product Specification
2SC3423
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=10mA; IB=1mA
1.0
V
VBE
Base-emitter on voltage
IC=10mA ; VCE=5V
0.8
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
µA
hFE
DC current gain
IC=10mA ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V f=1MHz
1.8
pF
fT
Transition frequency
IC=10mA ; VCE=5V
200
MHz
hFE Classifications
O
Y
80-160
120-240
2
150
UNIT
V
80
240
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC3423
SavantIC Semiconductor
Product Specification
2SC3423
Silicon NPN Power Transistors
4