SavantIC Semiconductor Product Specification 2SC5149 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-Peak 16 A IB Base current 4 A PT Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC5149 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS Emitter-base breakdown voltage IC=400mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.3A VBEsat Base-emitter saturation voltage IC=5A; IB=1.3A ICBO Collector cut-off current VCB=1500V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain hFE-2 MIN TYP. MAX 5 UNIT V 5 V 1.3 V 1 mA 66 200 mA IC=1A ; VCE=5V 8 25 DC current gain IC=5A ; VCE=5V 3.8 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 110 VF Forward voltage(damper diode) IF=5A 1.35 fT Transition frequency IE=0.1A ; VCE=10V 1 pF 1.8 2 V MHz Switching times (inductive load) ts Storage time tf Fall time ICP=5A;IB1(end) =1.1A fH=31.5kHz 2 4 6 µs 0.2 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SC5149 SavantIC Semiconductor Product Specification 2SC5149 Silicon NPN Power Transistors 4