SavantIC Semiconductor Product Specification 2SC3352 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ·High speed switching APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 1.5 A ICM Collector current-Peak 3.0 A IB Base current 0.5 A PC Collector power dissipation TC=25 25 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3352 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=1A ; VCE=5V 8 Transition frequency IC=0.2A ; VCE=10V fT CONDITIONS MIN TYP. MAX 500 UNIT V 2.5 MHz Switching times ton Turn-on time tstg Storage time tf IC=1A; IB1=-IB2=0.2A VCC=200V Fall time 2 1.0 µs 3.0 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3352