SAVANTIC 2SD1535

SavantIC Semiconductor
Product Specification
2SD1535
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·Wide area of safe operation
·High breakdown voltage
·DARLINGTON
APPLICATIONS
·For high power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector -emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
12
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
0.5
A
PC
Collector power dissipation
TC=25
50
Ta=25
2.0
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1535
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; RBZ=>,L=25mH
VCEsat
Collector-emitter saturation voltage
IC=7A ; IB=70mA
2.0
V
VBEsat
Base-emitter saturation voltage
IC=7A ; IB=70mA
2.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=400V; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=12V; IC=0
100
mA
hFE-1
DC current gain
IC=2A ; VCE=2V
500
hFE-2
DC current gain
IC=6A ; VCE=2V
200
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
20
MHz
1.5
µs
5.0
µs
6.5
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=7A ; IB1=-IB2=70mA
VCC=300V
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
2SD1535