Inchange Semiconductor Product Specification 2SC4140 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 18 A ICP Collector current-pulse 36 A IB Base current 6 A PC Collector power dissipation 130 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4140 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 0.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.3 V ICBO Collector cut-off current VCB=500V ;IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=10A ; VCE=4V Transition frequency IE=-2A ; VCE=12V 10 MHz Collector output capacitance f=1MHz ; VCB=10V 165 pF fT COB CONDITIONS MIN TYP. MAX 400 UNIT V 10 30 Switching times ton Turn-on time tstg Storage time tf IC=10A;IB1=1A; IB2=-2A;RL=20Ω VCC=200V Fall time 2 1.0 μs 3.0 μs 0.5 μs Inchange Semiconductor Product Specification 2SC4140 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC4140 Silicon NPN Power Transistors 4