Inchange Semiconductor Product Specification 2SC3979 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Wide area of safe operation APPLICATIONS ・For high breakdown voltage high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Ta=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-peak 5 A IB Base current 1 A PC Collector power dissipation TC=25℃ 40 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3979 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=0.8A ;IB=0.16A 1.5 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.5 V ICBO Collector cut-off current VCB=900V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 8 hFE-2 DC current gain IC=0.8A ; VCE=5V 6 Transition frequency IC=0.15A ; VCE=5V fT CONDITIONS MIN TYP. MAX 800 UNIT V 10 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=0.8A ;IB1=0.16A IB2=-0.32A VCC=250V 2 0.7 μs 2.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3979 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SC3979 Silicon NPN Power Transistors 4