Inchange Semiconductor Product Specification 2SC4004 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・ Wide area of safe operation (ASO) ・High-speed switching ・High collector to base voltage VCBO APPLICATIONS ・For high breakdown voltage highspeed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER INC CONDITIONS EM S E G N A H Collector-base voltage D N O IC Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector R O T UC VALUE UNIT 900 V 800 V 7 V IC Collector current (DC) 1 A ICM Collector current-Peak 2 A IB Base current 0.3 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2 w Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4004 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 VCEsat Collector-emitter saturation voltage IC=0.2A ;IB=0.04A 1.5 V VBEsat Base-emitter saturation voltage IC=0.2A; IB=0.04A 1.0 V ICBO Collector cut-off current VCB=900V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=0.05A ; VCE=5V 6 hFE-2 DC current gain IC=0.5A ; VCE=5V 3 Transition frequency IC=0.05A; VCE=10V;f=1MHz fT Switching times ton ts tf 体 导 半 固电 EM S E NG Turn-on time A H C IN Storage time CONDITIONS 2 TYP. MAX 800 UNIT V R O T UC D N O IC IC=0.2A ;IB1=0.04A; IB2=-0.04A;VCC=250V Fall time MIN 4 MHz 1.0 μs 3.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC4004 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3