SavantIC Semiconductor Product Specification 2SC3795 2SC3795A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC3795 VCBO Collector-base voltage VALUE UNIT 800 Open emitter 2SC3795A V 900 VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current 3 A PC Collector power dissipation TC=25 40 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3795 2SC3795A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V 0.1 mA 0.1 mA ICBO Collector cut-off current 2SC3795 VCB=800V; IE=0 2SC3795A VCB=900V; IE=0 500 UNIT IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V fT V 8 MHz Switching times ton 2SC3795 1.0 2SC3795A 1.2 Turn-on time ts Storage time tf Fall time µs IC=3A; IB1=- IB2=0.6A VCC=200V 3.0 2SC3795 1.0 2SC3795A 1.2 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification 2SC3795 2SC3795A Silicon NPN Power Transistors 4