SAVANTIC 2SC3795

SavantIC Semiconductor
Product Specification
2SC3795 2SC3795A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·High speed switching
·Low collector saturation voltage
APPLICATIONS
·For high breakdown voltate ,high-speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SC3795
VCBO
Collector-base voltage
VALUE
UNIT
800
Open emitter
2SC3795A
V
900
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current (DC)
5
A
ICM
Collector current-Peak
10
A
IB
Base current
3
A
PC
Collector power dissipation
TC=25
40
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3795 2SC3795A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A , L=25mH
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.6A
1.5
V
0.1
mA
0.1
mA
ICBO
Collector
cut-off current
2SC3795
VCB=800V; IE=0
2SC3795A
VCB=900V; IE=0
500
UNIT
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V
fT
V
8
MHz
Switching times
ton
2SC3795
1.0
2SC3795A
1.2
Turn-on time
ts
Storage time
tf
Fall time
µs
IC=3A; IB1=- IB2=0.6A
VCC=200V
3.0
2SC3795
1.0
2SC3795A
1.2
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3795 2SC3795A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
2SC3795 2SC3795A
Silicon NPN Power Transistors
4