Inchange Semiconductor Product Specification 2SC4907 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 2 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4907 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.3 V ICBO Collector cut-off current VCB=600V; IE=0 1 mA IEBO Emitter cut-off current VEB=10V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=4V COB Output capacitance IE=0; VCB=10V;f=1MHz 45 pF fT Transition frequency IE=-0.5A ; VCE=12V 8 MHz 500 UNIT V 10 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=2A; IB1=0.2A IB2=-0.4A VCC=200V ,RL=100Ω 2 1.0 μs 4.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC4907 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4907 Silicon NPN Power Transistors 4