SavantIC Semiconductor Product Specification 2SD1180 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 2.5 A PC Collector power dissipation Ta=25 1.2 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1180 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 110 V V(BR)CBO Collector-base breakdown voltage IC=100µA; IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=100µA ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 0.7 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.3 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 µA hFE DC current gain IC=150mA ; VCE=5V 2 MIN 100 TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1180