SavantIC Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1271 ·Low saturation voltage ·Good linearity of hFE ·High current APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter -130 VCEO Collector-emitter voltage Open base -80 VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -7 A ICM Collector current-Peak -15 A PC Collector power dissipation TC=25 40 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.25A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 60 Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.5 µs 1.5 µs 0.1 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=-3A ;IB1=-0.3A IB2=0.3A hFE-2 Classifications R Q P 60-120 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SB946 SavantIC Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors 4