SAVANTIC 2SB1154

SavantIC Semiconductor
Product Specification
2SB1154
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SD1705
·Low collector saturation voltage
·Satisfactory linearity of hFE
APPLICATIONS
·For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-10
A
ICM
Collector current-peak
-20
A
PC
Collector power dissipation
TC=25
70
Ta=25
3
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1154
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-6A ;IB=-0.3A
-0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-10A ;IB=-1A
-1.5
V
VBEsat-1
Base-emitter saturation voltage
IC=-6A ;IB=-0.3A
-1.5
V
VBEsat-2
Base-emitter saturation voltage
IC=-10A ;IB=-1A
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
µA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE -2
DC current gain
IC=-3A ; VCE=-2V
90
hFE -3
DC current gain
IC=-6A ; VCE=-2V
30
Transition frequency
IC=-0.5A ; VCE=-10V;f=10MHz
fT
CONDITIONS
MIN
TYP.
MAX
-80
UNIT
V
260
30
MHz
0.5
µs
1.0
µs
0.2
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-6A ;IB1=-IB2=-0.6A
VCC=-50V
Fall time
hFE-2 classifications
Q
P
90-180
130-260
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SB1154
SavantIC Semiconductor
Product Specification
2SB1154
Silicon PNP Power Transistors
4