SavantIC Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -10 A ICM Collector current-peak -20 A PC Collector power dissipation TC=25 70 Ta=25 3 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-6A ;IB=-0.3A -0.5 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-1A -1.5 V VBEsat-1 Base-emitter saturation voltage IC=-6A ;IB=-0.3A -1.5 V VBEsat-2 Base-emitter saturation voltage IC=-10A ;IB=-1A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE -2 DC current gain IC=-3A ; VCE=-2V 90 hFE -3 DC current gain IC=-6A ; VCE=-2V 30 Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.5 µs 1.0 µs 0.2 µs Switching times ton Turn-on time tstg Storage time tf IC=-6A ;IB1=-IB2=-0.6A VCC=-50V Fall time hFE-2 classifications Q P 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 2SB1154 SavantIC Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors 4