SavantIC Semiconductor Product Specification 2SB867 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD959 ·Excellent linearity of hFE APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -3 A ICM Collector current -peak -6 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB867 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IE=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-0.5A ; VCE=-2V 60 Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.3 µs 1.1 µs 0.3 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=-0.5A IB1=-IB2=-50mA hFE-2 classifications R Q P 60-120 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB867 SavantIC Semiconductor Product Specification 2SB867 Silicon PNP Power Transistors 4 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 5 2SB867