SavantIC Semiconductor Product Specification 2SD1344 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Built-in damper diode APPLICATIONS ·For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V 6 A 50 W IC Collector current PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -40~150 TC=25 SavantIC Semiconductor Product Specification 2SD1344 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100m A;IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=200m A;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=4A;IB=0.8 A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 5 Diode forward voltage IF=4A 2.0 V VF CONDITIONS 2 MIN TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1344