SAVANTIC 2SD2335

SavantIC Semiconductor
Product Specification
2SD2335
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
5
V
IC
Collector current
7
A
IB
Base current
1.5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD2335
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA , IB=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=200mA , IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V IE=0
10
µA
hFE
DC current gain
IC=1A ; VCE=5V
VF
Diode forward voltage
IF=6A
2.0
V
2
MIN
TYP.
MAX
UNIT
8
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SD2335