SavantIC Semiconductor Product Specification 2SD2333 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V 5 A 2.5 A 80 W IC Collector current IBM Base current-peak PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 1 SavantIC Semiconductor Product Specification 2SD2333 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA hFE DC current gain IC=1A ; VCE=5V VF Diode forward voltage IF=5A 2.0 V 2 MIN TYP. MAX UNIT 8 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2333