SavantIC Semiconductor Product Specification 2SD2293 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·Built-in damper diode APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 6 V 3 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55-150 TC=25 SavantIC Semiconductor Product Specification 2SD2293 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VEBO(BR) Emitter-base breakdown voltage IE=350mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V hFE DC current gain IC=0.5A ; VCE=5V ICES Collector cut-off current VCE=1500V; VBE=0 0.5 mA 2 MIN TYP. MAX UNIT 8 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD2293