SAVANTIC 2SD1348

SavantIC Semiconductor
Product Specification
2SD1348
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SB986
·High current capacity
APPLICATIONS
·Power supplies,relay drivers,lamp
drivers,electrical equipment
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
4
A
ICM
Collector current-peak
6
A
PD
Total power dissipation
Ta=25
1.2
TC=25
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1348
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1.0mA ;RBE=<
50
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10µA ;IC=0
6
V
V(BR)CBO
Collector-base breakdown voltage
IC=10µA ;IE=0
60
V
VCEsat
Collector-emitter saturation voltage
IC=2.0A; IB=0.1A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2.0A; IB=0.1A
1.2
V
ICBO
Collector cut-off current
VCB=40V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
mA
hFE-1
DC current gain
IC=100mA ; VCE=2V
100
hFE-2
DC current gain
IC=3A ; VCE=2V
40
Transition frequency
IC=50mA ; VCE=10V
150
MHz
Collector output capacitance
f=1MHz ; VCB=10V
25
pF
fT
COB
CONDITIONS
hFE-1 Classifications
R
S
T
U
100-200
140-280
200-400
280-560
2
MIN
TYP.
MAX
UNIT
560
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1348