Inchange Semiconductor Product Specification 2SD1348 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SB986 ·High current capacity APPLICATIONS ·Power supplies,relay drivers,lamp drivers,electrical equipment PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 4 A ICM Collector current-peak 6 A PD Total power dissipation Ta=25℃ 1.2 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1348 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1.0mA ;RBE=∞ 50 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 6 V V(BR)CBO Collector-base breakdown voltage IC=10μA ;IE=0 60 V VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.1A 0.5 V VBEsat Base-emitter saturation voltage IC=2.0A; IB=0.1A 1.2 V ICBO Collector cut-off current VCB=40V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=100mA ; VCE=2V 100 hFE-2 DC current gain IC=3A ; VCE=2V 40 Transition frequency IC=50mA ; VCE=10V 150 MHz Collector output capacitance f=1MHz ; VCB=10V 25 pF fT COB CONDITIONS hFE-1 Classifications R S T U 100-200 140-280 200-400 280-560 2 MIN TYP. MAX UNIT 560 Inchange Semiconductor Product Specification 2SD1348 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3