SavantIC Semiconductor Product Specification 2SD1441 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 5 V VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector IC Collector current (DC) 4 A ICM Collector current-peak 15 A IBM Base current-peak 3.5 A PC Collector power dissipation 70 W Tj Junction temperature 130 Tstg Storage temperature -55~130 TC=25 SavantIC Semiconductor Product Specification 2SD1441 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=1A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 50 µA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE DC current gain IC=3A ; VCE=10V ts Storage time tf Fall time VF Diode forward voltage IC=3A IBend=1A,LLeak=5µH IF=-4A,IB=0 2 5 UNIT V 5 15 4 9 µs 0.8 µs 2.2 V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD1441