SAVANTIC 2SD1441

SavantIC Semiconductor
Product Specification
2SD1441
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high reliability
·High speed switching
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
1500
V
5
V
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
4
A
ICM
Collector current-peak
15
A
IBM
Base current-peak
3.5
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
130
Tstg
Storage temperature
-55~130
TC=25
SavantIC Semiconductor
Product Specification
2SD1441
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=500mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=750V; IE=0
50
µA
ICBO
Collector cut-off current
VCB=1500V; IE=0
1
mA
hFE
DC current gain
IC=3A ; VCE=10V
ts
Storage time
tf
Fall time
VF
Diode forward voltage
IC=3A
IBend=1A,LLeak=5µH
IF=-4A,IB=0
2
5
UNIT
V
5
15
4
9
µs
0.8
µs
2.2
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD1441