Inchange Semiconductor Product Specification 2SD2057 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 7 V IC Collector current 5 A ICM Collector current-peak 20 A IB Base current 4 A PC Collector power dissipation Tj Tstg Max.operating junction temperature Storage temperature Ta=25℃ 3 TC=25℃ 100 W 150 ℃ -55~150 ℃ Inchange Semiconductor Product Specification 2SD2057 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=1.2A 8.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.2A 1.5 V VCB=1000V; IE=0 30 μA VCB=1500V; IE=0 0.3 mA ICBO 7 UNIT V Collector cut-off current hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=10V 4.5 fT Transition frequency IC=1A ; VCE=10V;f=0.5MHz VF Diode forward voltage IC=-6A ;IB=0 ts Storage time 15 2 MHz -2.3 V 12 μs 0.8 μs IC=5A;IB1=-IB2=1.2A;LLeak=5μH tf Fall time 2 Inchange Semiconductor Product Specification 2SD2057 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3