SavantIC Semiconductor Product Specification 2SD2300 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·For color TV horizontal output deflection applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector VALUE UNIT 1500 V 6 V IC Collector current 5 A ICM Collector current-peak 6 A IC(surge) Collector surge current 16 A 50 W PC Collector power dissipation TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2300 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-base breakdown voltage IE=350mA , IC=0 VCE(sat) Collector-emitter saturation voltage IC=4.5A ; IB=1.2A 5.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ; IB=1.2A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 500 µA hFE DC current gain IC=1A ; VCE=5V 20 Fall time IC=4A ; IB1=0.8A; IB2=-1.5A 1.0 µs Diode forward voltage IF=6A 3.0 V tf VF 2 6 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD2300