SAVANTIC 2SD2300

SavantIC Semiconductor
Product Specification
2SD2300
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFM package
·High breakdown voltage
·Built-in damper diode
APPLICATIONS
·For color TV horizontal output deflection
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
VALUE
UNIT
1500
V
6
V
IC
Collector current
5
A
ICM
Collector current-peak
6
A
IC(surge)
Collector surge current
16
A
50
W
PC
Collector power dissipation
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD2300
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)EBO
Emitter-base breakdown voltage
IE=350mA , IC=0
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A ; IB=1.2A
5.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A ; IB=1.2A
1.5
V
ICES
Collector cut-off current
VCE=1500V; RBE=0
500
µA
hFE
DC current gain
IC=1A ; VCE=5V
20
Fall time
IC=4A ; IB1=0.8A; IB2=-1.5A
1.0
µs
Diode forward voltage
IF=6A
3.0
V
tf
VF
2
6
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SD2300