SavantIC Semiconductor Product Specification 2SD1772 2SD1772A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB1192/1192A ·Large collector power dissipation APPLICATIONS ·For power amplification ·For TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD1772 Emitter-base voltage IC UNIT 200 V 150 Open base 2SD1772A VEBO VALUE V 180 Open collector 6 V Collector current (DC) 1 A ICM Collector current-peak 2 A PC Collector power dissipation TC=25 25 Ta=25 2 w Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1772 2SD1772A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1772 MIN TYP. MAX UNIT 150 IC=5mA , IB=0 V 180 2SD1772A Emitter-base breakdown voltage IE=0.5mA , IC=0 Collector-emitter saturation voltage IC=500mA ;IB=50mA 1.0 V VBE Base-emitter on voltage IC=300mA ; VCE=10V 1.0 V ICBO Collector cut-off current VCB=200V; IE=0 50 µA IEBO Emitter cut-off current VEB=4V; IC=0 50 µA hFE-1 DC current gain IC=100mA ; VCE=10V 60 hFE-2 DC current gain IC=300mA ; VCE=10V 50 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 27 pF fT Transition frequency IC=100mA ; VCE=10V;f=1MHz 20 MHz VCEsat hFE-1 Classifications Q P 60-140 100-240 2 6 V 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification 2SD1772 2SD1772A Silicon NPN Power Transistors 4