Inchange Semiconductor Product Specification 2SD1772 2SD1772A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB1192/1192A ・Large collector power dissipation APPLICATIONS ・For power amplification ・For TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH ABSOLUTE MAXIMUM RATINGS AT Ta=25℃ SYMBOL VCBO PARAMETER CONDITIONS Collector-base voltage Open emitter 2SD1772 VCEO Collector-emitter voltage Emitter-base voltage IC UNIT 200 V 150 Open base 2SD1772A VEBO VALUE V 180 Open collector 6 V Collector current (DC) 1 A ICM Collector current-peak 2 A PC Collector power dissipation TC=25℃ 25 Ta=25℃ 2 w Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1772 2SD1772A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1772 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 150 IC=5mA , IB=0 V 180 2SD1772A V(BR)EBO MIN Emitter-base breakdown voltage IE=0.5mA , IC=0 Collector-emitter saturation voltage IC=500mA ;IB=50mA 1.0 V VBE Base-emitter on voltage IC=300mA ; VCE=10V 1.0 V ICBO Collector cut-off current VCB=200V; IE=0 50 μA IEBO Emitter cut-off current VEB=4V; IC=0 50 μA hFE-1 DC current gain IC=100mA ; VCE=10V 60 DC current gain IC=300mA ; VCE=10V 50 Output capacitance IE=0 ; VCB=10V;f=1MHz 27 pF Transition frequency IC=100mA ; VCE=10V;f=1MHz 20 MHz VCEsat hFE-2 COB fT 6 V 240 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH hFE-1 Classifications Q P 60-140 100-240 2 Inchange Semiconductor Product Specification 2SD1772 2SD1772A Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD1772 2SD1772A Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4